? semiconductor components industries, llc, 2006 february, 2006 ? rev. 5 1 publication order number: 2n3055a/d 2n3055a (npn) mj15015, MJ15016 (pnp) mj15015 and MJ15016 are preferred devices complementary silicon high?power transistors these powerbase complementary transistors are designed for high power audio, stepping motor and other linear applications. these devices can also be used in power switching circuits such as relay or solenoid drivers, dc?to?dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2n3055. features ? current?gain ? bandwidth?product @ i c = 1.0 adc f t = 0.8 mhz (min) ? npn = 2.2 mhz (min) ? pnp ? safe operating area ? rated to 60 v and 120 v, respectively ? pb?free packages are available* maximum ratings (note 1) rating symbol value unit collector?emitter voltage 2n3055a mj15015, MJ15016 v ceo 60 120 vdc collector?base voltage 2n3055a mj15015, MJ15016 v cbo 100 200 vdc collector?emitter voltage base reversed biased 2n 3055a mj15015, MJ15016 v cev 100 200 vdc emitter?base voltage v ebo 7.0 vdc collector current ? continuous i c 15 adc base current i b 7.0 adc total device dissipation @ t c = 25 c derate above 25 c 2n3055a total device dissipation @ t c = 25 c derate above 25 c mj15015, MJ15016 p d 115 0.65 180 1.03 w w/ c operating and storage junction temperature range t j , t stg ?65 to +200 c thermal characteristics characteristics symbol max max unit thermal resistance, junction?to?case r jc 1.52 0.98 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. indicates jedec registered data. (2n3055a) *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 15 ampere complementary silicon power transistors 60, 120 volts ? 115, 180 watt s http://onsemi.com marking diagrams 2n3055ag ayww mex to?204aa (to?3) case 1?07 style 1 2n3055a = device code mj1501x = device code x = 5 or 6 g = pb?free package a = assembly location y = year ww = work week mex = country of origin preferred devices are recommended choices for future use and best overall value. mj1501xg ayww mex see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information
2n3055a (npn) mj15015, MJ15016 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ????????????????????? ????????????????????? characteristic ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? off characteristics (note 2) ????????????????????? ? ??????????????????? ? ????????????????????? collector?emitter sustaining voltage (note 3) 2n3055a (i c = 200 madc, i b = 0) mj15015, MJ15016 ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 60 120 ??? ? ? ? ??? ? ? ???? ? ?? ? ???? vdc ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? collector cutoff current (v ce = 30 vdc, v be(off) = 0 vdc) 2n3055a (v ce = 60 vdc, v be(off) = 0 vdc) mj15015, MJ15016 ????? ? ??? ? ? ??? ? ????? i ceo ???? ? ?? ? ? ?? ? ???? ? ? ??? ? ? ? ? ? ? ??? 0.7 0.1 ???? ? ?? ? ? ?? ? ???? madc ????????????????????? ????????????????????? ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? collector cutoff current (v cev = rated value, v be(off) = 1.5 vdc, 2n3055a t c = 150 c) mj15015, MJ15016 ????? ? ??? ? ? ??? ? ????? i cev ???? ? ?? ? ? ?? ? ???? ? ? ??? ? ? ? ? ? ? ??? 30 6.0 ???? ? ?? ? ? ?? ? ???? madc ????????????????????? ? ??????????????????? ? emitter cutoff current 2n3055a (v eb = 7.0 vdc, i c = 0) mj15015, MJ15016 ????? ? ??? ? i ebo ???? ? ?? ? ? ? ??? ? ? ? 5.0 0.2 ???? ? ?? ? madc ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? second breakdown (note 3) ????????????????????? ? ??????????????????? ? ????????????????????? second breakdown collector current with base forward biased (t = 0.5 s non?repetitive) 2n3055a (v ce = 60 vdc) mj15015, MJ15016 ????? ? ??? ? ????? i s/b ???? ? ?? ? ???? 1.95 3.0 ??? ? ? ? ??? ? ? ???? ? ?? ? ???? adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 2 and 3) ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? dc current gain (i c = 4.0 adc, v ce = 2.0 vdc) (i c = 4.0 adc, v ce = 4.0 vdc) (i c = 10 adc, v ce = 4.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 10 20 5.0 ??? ? ? ? ? ? ? ??? 70 70 ? ???? ? ?? ? ? ?? ? ???? ? ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? collector?emitter saturation voltage (i c = 4.0 adc, i b = 400 madc) (i c = 10 adc, i b = 3.3 adc) (i c = 15 adc, i b = 7.0 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? ? ? ? ??? ? ? ? ? ? ? ??? 1.1 3.0 5.0 ???? ? ?? ? ? ?? ? ???? vdc ????????????????????? ? ??????????????????? ? ????????????????????? base?emitter on voltage (i c = 4.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ???? ? ?? ? ???? 0.7 ??? ? ? ? ??? 1.8 ???? ? ?? ? ???? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics (note 3) ????????????????????? ? ??????????????????? ? ????????????????????? current?gain ? bandwidth product 2n3055a, mj15015 (i c = 1.0 adc, v ce = 4.0 vdc, f = 1.0 mhz) MJ15016 ????? ? ??? ? ????? f t ???? ? ?? ? ???? 0.8 2.2 ??? ? ? ? ??? 6.0 18 ???? ? ?? ? ???? mhz ????????????????????? ? ??????????????????? ? ????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) ????? ? ??? ? ????? c ob ???? ? ?? ? ???? 60 ??? ? ? ? ??? 600 ???? ? ?? ? ???? pf ????????????????????????????????? ????????????????????????????????? switching characteristics (2n3055a only) (note 3) ????????????????????????????????? ????????????????????????????????? resistive load ????????????? ????????????? delay time ????????? ? ??????? ? ? ??????? ? ? ??????? ? ????????? (v cc = 30 vdc, i c = 4.0 adc, i b1 = i b2 = 0.4 adc, t p = 25 s duty cycle 2% ????? ????? ???? ???? ??? ??? ???? ???? s ????????????? ????????????? ????? ????? ???? ???? ??? ??? ???? ???? s ????????????? ????????????? ????? ????? ???? ???? ??? ??? ???? ???? s ????????????? ????????????? ????? ????? ???? ???? ??? ??? ???? ???? s 2. pulse test: pulse width = 300 s, duty cycle 2%. 3. indicates jedec registered data. (2n3055a)
2n3055a (npn) mj15015, MJ15016 (pnp) http://onsemi.com 3 200 0 0 25 50 75 100 125 150 175 200 figure 1. power derating t c , case temperature ( c) mj15015 MJ15016 p , average power dissipation (w) d(av) 150 100 50 2n3055a v ce , collector?emitter voltage (volts ) figure 2. dc current gain 200 0.2 i c , collector current (amp) 2 0.3 0.5 0.7 1 2 3 5 7 15 70 30 10 5 100 50 h fe , dc current gain t j = 150 c 25 c ?55 c v ce = 4.0 v 20 7 3 10 figure 3. collector saturation region 2.8 0.005 i b , base current (amp) 0 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 2 1.6 0.8 0.4 i c = 1 a t j = 25 c 4 a 2.4 1.2 8 a f, current?gain bandwidth product (mhz) t 3.5 0.2 i c , collector current (amp) 0.3 0.5 0.7 1 2 3 5 7 20 2.5 1.5 1 0.5 0 t c = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v, voltage (volts) figure 4. ?on? voltages 3 2 10 v be(on) @ v ce = 4 v 10 0.1 i c , collector current (amps) 0.2 0.3 0.5 1.0 2.0 5.0 2.0 1.0 MJ15016 figure 5. current?gain ? bandwidth product 2n3055a mj15015
2n3055a (npn) mj15015, MJ15016 (pnp) http://onsemi.com 4 figure 6. switching times test circuit (circuit shown is for npn) +13 v 25 s 0 ?11 v 30 ?5 v 1n6073 scope v cc +30 v 7.5 t r , t f 10 ns duty cycle = 1.0% 10 0.2 figure 7. turn?on time i c , collector current (amp) t, time (s) 7 5 3 2 1 0.7 0.5 0.1 0.3 0.5 0.7 1 2 3 7 15 v cc = 30 v i c /i b = 10 t j = 25 c 0.3 0.2 510 t r t d 10 0.2 figure 8. turn?off times i c , collector current (amps) 7 5 3 2 0.1 0.5 0.1 0.3 0.5 0.7 1 3 5 15 v cc = 30 i c /i b = 10 i b 1 = i b 2 t j = 25 c 0.3 t, time (s) t f t s 2 0.7 0.2 710 400 1.0 figure 9. capacitances v r , reverse voltage (volts) 20 20 50 100 200 500 1000 2.0 5.0 10 c, capacitance (pf) 200 100 50 30 t j = 25 c c ib c ob 2n3055a mj15015 MJ15016
2n3055a (npn) mj15015, MJ15016 (pnp) http://onsemi.com 5 collector cut?off region 10,000 +0.2 figure 10. 2n3055a, mj15015 v be , base?emitter voltage (volts) 1000 100 10 1.0 , collector current (a) i c 0.1 0.01 +0.1 0 ?0.1 ?0.2 ?0.3 ?0.4 ?0.5 v ce = 30 v t j = 150 c 100 c 25 c reverse forward i c = i ces npn 1000 ?0.2 figure 11. MJ15016 v be , base?emitter voltage (volts) 100 10 1.0 0.1 , collector current (a) i c 0.01 0.001 ?0.1 0 +0.1 +0.2 +0.3 v ce = 30 v t j = 150 c 100 c 25 c reverse forward i c = i ces pnp +0.4 +0.5 20 figure 12. forward bias safe operating area 2n3055a v ce , collector?emitter voltage (volts) 10 5 1 10 20 100 60 2 i c , collector current (amps) dc 30 s 1 ms 100 s 100 ms 20 figure 13. forward bias safe operating area mj15015, MJ15016 v ce , collector?emitter voltage (volts) 10 5.0 0.2 15 20 100 60 2.0 i c , collector current (amp) dc 0.1ms 100ms bonding wire limit thermal limit @ t c = 25 c (single pulse) second breakdown limit 1.0 0.5 30 120 1.0ms bonding wire limit thermal limit @ t c = 25 c (single pulse) second breakdown limit there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 12 and 13 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to figure 1. ordering information device package shipping 2n3055a to?204 100 units / tray 2n3055ag to?204 (pb?free) mj15015 to?204 100 units / tray mj15015g to?204 (pb?free) MJ15016 to?204 MJ15016g to?204 (pb?free)
2n3055a (npn) mj15015, MJ15016 (pnp) http://onsemi.com 6 package dimensions to?204 (to?3) case 1?07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to?204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b ??? 1.050 ??? 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n ??? 0.830 ??? 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ?t? seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t ?q? ?y? 2 1 u l g b v h style 1: pin 1. base 2. emitter case: collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n3055a/d powerbase is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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